MBCFET Process Technology to Enable 3nm Chips in 2021

Planar FinFET GAA MBCFET Transistor

We often read new processor are manufactured with a FinFET process. The new process was created due to short channel effects in traditional planar transistors, and FinFET (Fin Field-effect transistor) was introduced to enable further voltage scaling but with the process node becoming smaller and smaller, electrostatics effects started to cause problem. A solution was to use GAA (Gate All Around) nanowires to limit those effects, but those are apparently really hard to integrate into silicon, so Samsung ended up using thin layers (nanosheets) instead of nanowires enabling greater current per track in their GAA implementation called MBCFET (Multi-Bridge Channel Field-Effect Transistor). While FinFET starts to encounter limitations under 4-5nm, MBCFET will enable manufacturing of chips using a 3nm process. Silicon designers can get started straight away as Samsung Foundry has recently announced the release of their 3GAE PDK (Process Design) version 0.1. Compared to 7nm FinFET technology, Samsung’s 3GAE / MBCFET process should provide up to a 45 percent …

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